HANBit

HMNR5128D(V)

URL : www.hbe.co.kr

8

HANBit Electronics Co.,Ltd

Rev. 2.0 (March, 2002)

WRITE Mode AC Characteristics

HMN5128D

HMNR5128DV

-70

-85

Symbol

Parameter

(1)

Min

Max

Min

Max

Unit

WRITE Cycle Time

70

85

nS

Address Valid to WRITE Enable Low

0

0

nS

Address Valid to Chip Enable Low

0

0

nS

WRITE Enable Pulse Width

45

55

nS

Chip Enable Low to Chip Enable High

50

60

nS

WRITE Enable High to Address Transition

0

0

nS

Chip Enable High to Address Transition

0

0

nS

Input Valid to WRITE Enable High

25

30

nS

Input Valid to Chip Enable High

25

30

nS

WRITE Enable High to Input Transition

0

0

nS

Chip Enable High to Input Transition

0

0

nS

(2,3)

WRITE Enable Low to Output High-Z

20

25

nS

Address Valid to WRITE Enable High

55

65

nS

Address Valid to Chip Enable High

55

65

nS

(2,3)

WRITE Enable High to Output Transition

5

5

nS

Note : 1. Valid for Ambient Operating Temperature: TA = 0 to 70° C; VCC = 4.5 to 5.5V or 3.0 to 3.6V (except where

noted).

2. CL = 5pF.

3. If /CE goes low simultaneously with /WE going low, the outputs remain in the high impedance state.

Data Retention Mode

All outputs become high impedance and all inputs are treated as “Don't care.”

Note : A power failure during a WRITE cycle may corrupt data at the current addressed location, but does not jeopardize

clock. The internal energy source will maintain data in the HMNR5128D(V) for an accumulated period of at least 10 years