RJK03A4DPA-00-J53 datasheet(5/7 Pages) RENESAS

Part #	RJK03A4DPA-00-J53

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 7 page

RJK03A4DPA

Preliminary

REJ03G1828-0200 Rev.2.00 Sep 29, 2009

Page 5 of 6

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

50

Ω

Vin

15 V

0

ID

VDS

IAP

V(BR)DSS

L

VDD

EAR =

L

• I

AP

2

•

2

1

VDSS

VDSS – VDD

Avalanche Test Circuit

Avalanche Waveform

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width

Vin Monitor

D.U.T.

Vin

10 V

RL

VDS

= 10 V

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout

Monitor

90%

10%

tf

Switching Time Test Circuit

Switching Time Waveform

Rg

3

1

0.3

0.1

0.03

0.01

1 m

10 m

100 m

1

10

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

10

μ

100

μ

Tc = 25°C

PDM

PW

T

D =

PW

T

θch – c (t) = γ s (t) • θch – c

θch – c = 2.78°C/W, Tc = 25°C

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RJK03A4DPA-00-J53 Datasheet(PDF) 5 Page - Renesas Technology Corp

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