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RJH60F4DPK-00-T0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJH60F4DPK-00-T0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 Preliminary RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) C G E RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 4 Absolute Maximum Ratings (Tc = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES ±30 V Tc = 25 °C IC Note1 60 A Collector current Tc = 100 °C IC Note1 30 A Collector peak current ic(peak) Note1 120 A Collector to emitter diode forward peak current iDF(peak) Note2 100 A Collector dissipation PC 235.8 W Junction to case thermal impedance θj-c 0.53 °C/W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% |
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