HANBit

HSD32M64B8W

URL:www.hbe.co.kr

5

HANBit Electronics Co.,Ltd.

REV.1.0(August.2002)

DC OPERATING CONDITIONS

(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70

°C) )

PARAMETER

SYMBOL

MIN

TYP.

MAX

UNIT

NOTE

Supply Voltage

Vcc

3.0

3.3

3.6

V

Input High Voltage

2.0

3.0

Vcc+0.3

V

1

Input Low Voltage

-0.3

0

0.8

V

2

Output High Voltage

2.4

-

-

V

Output Low Voltage

-

-

0.4

V

Input leakage current

-12

-

12

uA

3

Notes :

3. Any input 0V

≤ V

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

(VCC = 3.3V, TA = 23

°C, f = 1MHz, VREF =1.4V ± 200 mV)

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

Clock

20

32

pF

/RAS, /CAS,/WE,/CS, CKE, DQM

20

40

pF

Address

20

40

pF

DQ (DQ0 ~ DQ63)

32

52

pF

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

VERSION

PARAMETER

SYMBOL

TEST

CONDITION

-13

-12

-10

-10L

UNIT

NOTE

Operating current

(One bank active)

Burst length = 1

1200

1200

1120

1120

mA

1

CKE

≤ V

16

mA

Precharge standby current in

power-down mode

CKE & CLK

≤ V

16

mA

Precharge standby current in

non power-down mode

CKE

≥ V

CS*

≥ V

Input signals are changed

one time during 20ns

128

mA