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H5N3007FN-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N3007FN-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 4 page REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Page 1 of 3 H5N3007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1860-0100 Rev.1.00 Nov 09, 2009 Features • Low on-resistance • Low leakage current • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID 15 A Drain peak current ID (pulse) Note1 60 A Body-drain diode reverse drain current IDR 15 A Body-drain diode reverse drain peak current IDR (pulse) Note1 60 A Avalanche current IAP Note3 15 A Avalanche energy EAR Note3 13.5 mJ Channel to case thermal impedance θch-c 3.57 °C/W Channel dissipation Pch Note2 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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