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RJP6085DPN-00-T2 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJP6085DPN-00-T2 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page REJ03G1863-0100 Rev.1.00 Nov 09, 2009 Page 1 of 5 RJP6085DPN Silicon N Channel IGBT High Speed Power Switching REJ03G1863-0100 Rev.1.00 Nov 09, 2009 Features • High speed switching • Low collector to emitter saturation voltage Outline RENESAS Package code: PRSS0004AC-A) (Package name: TO-220AB) 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) C G E 1 2 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to Emitter voltage VCES 600 V Gate to Emitter voltage VGES ±30 V Collector current IC 40 A Collector peak current IC(peak) Note1 80 A Collector dissipation PC Note2 178.5 W Junction to case thermal impedance θj-c Note2 0.7 °C/W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25 °C |
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