BC847BM3T5G datasheet(2/6 Pages) ONSEMI

Part #	BC847BM3T5G

Description	General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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BC847BM3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 10 mA)

V(BR)CEO

45

−

V

Collector − Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0)

V(BR)CES

50

−

V

Collector − Base Breakdown Voltage

(IC = 10 mA)

V(BR)CBO

50

−

V

Emitter − Base Breakdown Voltage

(IE = 1.0 mA)

V(BR)EBO

6.0

−

V

Collector Cutoff Current

(VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

(IC = 2.0 mA, VCE = 5.0 V)

hFE

−

200

150

290

−

450

−

Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

0.6

V

Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat)

−

0.7

0.9

−

V

Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

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