NESG220034 datasheet(2/9 Pages) NEC

Part #	NESG220034

Description	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

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Manufacturer	NEC [NEC]

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ABSOLUTE MAXIMUM RATINGS (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

5.5

V

Collector to Emitter Voltage

VCES

13

V

Collector to Emitter Voltage

VCEO

5.5

V

Base Current

Note 1

IB

36

mA

Collector Current

IC

200

mA

Total Power Dissipation

Ptot

Note 2

886

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Notes 1. Depend on the ESD protect device.

2. Mounted on 3.8 cm

× 9.0 cm ×0.8 mm (t) glass epoxy PWB

THERMAL RESISTANCE (TA = +25

°C)

Parameter

Symbol

Ratings

Unit

Termal Resistance from Junction to

Ambient

Note

Rthj-a

141

°C/W

Note Mounted on 3.8 cm

× 9.0 cm × 0.8 mm (t) glass epoxy PWB

RECOMMENDED OPERATING RANGE (TA = +25

°C)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Collector Current

IC

−

40

−

mA

<R>

Data Sheet PU10767EJ02V0DS

2

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