ESDR0502NMUTBG datasheet(2/5 Pages) ONSEMI

Part #	ESDR0502NMUTBG

Description	Ultra Low Capacitance ESD Protection Array for High Speed Data Line Protection

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ESDR0502N

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

Ppk

Peak Power Dissipation

C

Capacitance @ VR = 0 and f = 1.0 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional TVS

IPP

IF

V

I

IR

IT

VRWM

VC VBR

VF

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

(Note 2)

5.5

V

Breakdown Voltage

VBR

IT = 1 mA, (Note 3)

6.0

V

Reverse Leakage Current

IR

VRWM = 5.5 V

1.0

mA

ESD Clamping Voltage

VC

Per IEC61000−4−2 (Note 4)

See Figures 1 & 2

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz between I/O Pins and GND

0.3

0.6

pF

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz between I/O Pins

0.3

0.6

pF

2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC

or continuous peak operating voltage level.

3. VBR is measured at pulse test current IT.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

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ESDR0502NMUTBG Datasheet(PDF) 2 Page - ON Semiconductor

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