© Semiconductor Components Industries, LLC, 2009

January, 2009 − Rev. 0

1

Publication Order Number:

MMBT2222AM3/D

MMBT2222AM3T5G

NPN General Purpose

Transistor

The MMBT2222AM3T5G device is a spin−off of our popular

SOT−23 three−leaded device. It is designed for general purpose

amplifier applications and is housed in the SOT−723 surface mount

package. This device is ideal for low−power surface mount

applications where board space is at a premium.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

40

Vdc

Collector−Base Voltage

75

Vdc

Emitter−Base Voltage

6.0

Vdc

Collector Current − Continuous

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

FR−5 Board (Note 1)

Derate above 25°C

265

2.1

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

470

°C/W

Total Device Dissipation

Derate above 25°C

640

5.1

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

195

°C/W

Junction and Storage Temperature

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

http://onsemi.com

Device

Package

ORDERING INFORMATION

MMBT2222AM3T5G SOT−723

(Pb−Free)

8000/Tape & Reel

COLLECTOR

3

1

BASE

2

EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−723

CASE 631AA

STYLE 1

1

2

3

AA M

AA

= Specific Device Code

M

= Date Code

MARKING

DIAGRAM