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2N7002-G Datasheet(PDF) 1 Page - Comchip Technology |
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2N7002-G Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 4 page  2N7002-G (N-Channel) RoHS Device MOSFET MOSFET QW-BTR12 Page 1 REV:B SMD Diodes Specialist Features Power dissipation : 0.35W Equivalent Circuit Dimensions in inches and (millimeter) SOT-23 D D G G S S 0.083(2.10) 0.066(1.70) 0.056(1.40) 0.047(1.20) 0.119(3.00) 0.110(2.80) 0.006(0.15)max 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.007(0.20)min 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) Symbol Parameter Value Unit Maximum Ratings (at TA=25°C) Drain-Source voltage Drain current Power dissipation Junction and storage temperature G : Gate S : Source D : Drain VDS ID PD TJ, TSTG 60 250 350 -55 ~ +150 V mA mW °C Symbol Parameter Conditions Typ Max Unit Electrical Characteristics (at TA=25°C unless otherwise noted) Drain-Source breakdown voltage Gate-Threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-Source on resistance Forward tran conductance Diode forward voltage Total gate charge Gate-Source charge Gate-Drain charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time VGS=0V, ID=10μA VDS=VGS, ID=250μA VDS=0V, VGS=15V VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=125°C VGS=10V, VDS=7.5V VGS=4.5V, VDS=10V VGS=10V, ID=250mA VGS=4.5V, ID=200mA VDS=15V, ID=200mA IS=200mA, VGS=0V VDS=30V, VGS=10V, ID=250mA VDS=25V, VGS=0V, f=1MHz VDD=30V, RL=200Ω ID=100mA, VGEN=10V RG=10Ω Min V(BR)DSS Vth(GS) IGSS IDSS ID(ON) rDS(ON) gts VSD Qg Qgs Qgd Ciss COSS CrSS td(ON) tr td(off) 60 1 800 500 70 1.5 1300 700 1.5 2.0 300 0.85 0.6 0.06 0.06 25 6 1.2 7.5 6 7.5 2.5 10 1 500 3 4 1.2 1.0 20 20 V nA μA mA Ω mS V nC pF nS G S D Comchip Technology CO., LTD. |
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Similar Description - 2N7002-G |
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