NDF05N50Z datasheet(1/9 Pages) ONSEMI

Part #	NDF05N50Z

Description	N-Channel Power MOSFET 500 V, 1.25 ?

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Manufacturer	ONSEMI [ON Semiconductor]

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December, 2009 − Rev. 0

1

Publication Order Number:

NDF05N50Z/D

NDF05N50Z, NDP05N50Z,

NDD05N50Z

N-Channel Power MOSFET

500 V, 1.25 W

Features

• Low ON Resistance

• Low Gate Charge

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

NDF

NDP NDD Unit

Drain−to−Source Voltage

VDSS

500

V

Continuous Drain Current RqJC

ID

5

(Note 1)

5

4.7

A

Continuous Drain Current

RqJC, TA = 100°C

ID

3.2

(Note 1)

3.2

3

A

Pulsed Drain Current, VGS @

10 V

IDM

20

(Note 1)

20

19

A

Power Dissipation RqJC

PD

28

96

83

W

Gate−to−Source Voltage

VGS

±30

V

Single Pulse Avalanche Energy,

ID = 5.0 A

EAS

130

mJ

ESD (HBM) (JESD22−A114)

Vesd

3000

V

RMS Isolation Voltage (t =

0.3 sec., R.H. ≤ 30%, TA =

25°C) (Figure 15)

VISO

4500

V

Peak Diode Recovery

dv/dt

4.5 (Note 2)

V/ns

Continuous Source Current

(Body Diode)

IS

5

A

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for 10 s

Package Body for 10 s

TL

TPKG

300

260

°C

Operating Junction and

Storage Temperature Range

TJ, Tstg

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. IS = 4.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

MARKING AND ORDERING INFORMATION

VDSS

RDS(on) (TYP) @ 2.2 A

500 V

1.25 W

TO−220FP

CASE 221D

STYLE 1

TO−220AB

CASE 221A

STYLE 5

DPAK

CASE 369AA

STYLE 2

1 2

3

4

IPAK

CASE 369D

STYLE 2

1

2

3

4

1

2

3

1

2

3

N−Channel

G (1)

D (2)

S (3)

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