© Semiconductor Components Industries, LLC, 2008

March, 2008 - Rev. 0

1

Publication Order Number:

NSM21356DW6/D

NSM21356DW6T1G

Dual Complementary

Transistors

General Purpose PNP Transistor and

NPN Transistors with Monolithic Bias

Network

NSM21356DW6T1G contains a single PNP transistor and a

monolithic bias network NPN transistor with two resistors; a series

base resistor and a base-emitter resistor. This device is designed to

replace multiple transistors and resistors on customer boards by

integrating these components into a single device.

NSM21356DW6T1G is housed in a SC-88/SOT-363 package which

is ideal for low power surface mount applications in space constrained

applications.

Features

Applications

MAXIMUM RATINGS

Rating - Q1 (NPN BRT)

Symbol

Value

Unit

Collector‐Base Voltage

50

Vdc

Collector‐Emitter Voltage

50

Vdc

Collector Current

100

mAdc

Rating - Q2 (PNP)

Symbol

Value

Unit

Collector - Base Voltage

-80

Vdc

Collector - Emitter Voltage

-65

Vdc

Emitter - Base Voltage

-5.0

Vdc

Collector Current - Continuous

-100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

(1)

(2)

(3)

(4)

(5)

(6)

SC-88/SOT-363

CASE 419B

STYLE 1

1

6

MARKING DIAGRAM

N2 M

G

G

1

6

N2

= Device Code

M

= Date Code*

G

= Pb-Free Package

(Note: Microdot may be in either location)

Device

Package

ORDERING INFORMATION

NSM21356DW6T1G

SC-88

(Pb-Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation and/or position may vary

depending upon manufacturing location.