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NSM46211DW6T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NSM46211DW6T1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 4 page NSM46211DW6T1G http://onsemi.com 3 ELECTRICAL CHARACTERISTICS - Q2 (NPN BRT) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 0.5 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 35 60 - Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) - - 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL - - 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 - - Vdc Input Resistor R1 7.0 10 13 k W Resistor Ratio R1/R2 0.8 1.0 1.2 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% |
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