NSS40302PDR2G datasheet(4/9 Pages) ONSEMI

Part #	NSS40302PDR2G

Description	Complementary 40 V, 6.0 A, Low VCE(sat) Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS40302PDR2G

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PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−40

−

Vdc

Collector−Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−40

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−7.0

−

Vdc

Collector Cutoff Current

(VCB = −40 Vdc, IE = 0)

ICBO

−

−0.1

mAdc

Emitter Cutoff Current

(VEB = −6.0 Vdc)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = −10 mA, VCE = −2.0 V)

(IC = −500 mA, VCE = −2.0 V)

(IC = −1.0 A, VCE = −2.0 V)

(IC = −2.0 A, VCE = −2.0 V)

hFE

250

220

180

150

380

340

300

230

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = −0.1 A, IB = −0.010 A)

(IC = −1.0 A, IB = −0.100 A)

(IC = −1.0 A, IB = −0.010 A)

(IC = −2.0 A, IB = −0.200 A)

VCE(sat)

−

−0.013

−0.075

−0.130

−0.135

−0.017

−0.095

−0.170

V

Base −Emitter Saturation Voltage (Note 5)

(IC = −1.0 A, IB = −0.01 A)

VBE(sat)

−

−0.780

−0.900

V

Base −Emitter Turn−on Voltage (Note 5)

(IC = −0.1 A, VCE = −2.0 V)

VBE(on)

−

−0.660

−0.750

V

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)

fT

100

−

MHz

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)

Cibo

−

250

300

pF

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)

Cobo

−

50

65

pF

SWITCHING CHARACTERISTICS

Delay (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)

td

−

60

ns

Rise (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)

tr

−

120

ns

Storage (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)

ts

−

400

ns

Fall (VCC = −30 V, IC = −750 mA, IB1 = −15 mA)

tf

−

130

ns

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

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