NST848BF3T5G datasheet(2/4 Pages) ONSEMI

Part #	NST848BF3T5G

Description	NPN General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NST848BF3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mA)

V(BR)CEO

30

−

V

Collector−Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)

V(BR)CES

30

−

V

Collector−Base Breakdown Voltage (IC = 10 mA)

V(BR)CBO

30

−

V

Emitter−Base Breakdown Voltage (IE = 1.0 mA)

V(BR)EBO

5.0

−

V

Collector Cutoff Current

(VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

(IC = 2.0 mA, VCE = 5.0 V)

hFE

−

200

150

290

−

450

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

0.6

V

Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat)

−

0.7

0.9

−

V

Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz)

Cibo

−

10

pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

100

0

0.0001

0.02

IC, COLLECTOR CURRENT (A)

Figure 1. Collector Emitter Saturation Voltage vs.

Collector Current

Figure 2. DC Current Gain vs. Collector Current

0.18

0.0001

0.01

IC, COLLECTOR CURRENT (A)

0.04

0.001

0.06

500

600

0.08

0.10

IC/IB = 10

VCE(sat) = 150°C

0.1

0.01

0.001

25°C

−55°C

400

300

200

0.1

150°C (5.0 V)

150°C (1.0 V)

25°C (5.0 V)

25°C (1.0 V)

−55°C (5.0 V)

−55°C (1.0 V)

0.12

0.14

0.16

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