NTP6412AN datasheet(1/7 Pages) ONSEMI

Part #	NTP6412AN

Description	N-Channel Power MOSFET 100 V, 58 A, 18.2 m廓

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Manufacturer	ONSEMI [ON Semiconductor]

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October, 2009 − Rev. 0

1

Publication Order Number:

NTB6412AN/D

NTB6412AN, NTP6412AN

N-Channel Power MOSFET

100 V, 58 A, 18.2 mW

Features

• Low RDS(on)

• High Current Capability

• 100% Avalanche Tested

• These are Pb−Free Devices

MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

100

V

Gate−to−Source Voltage − Continuous

VGS

$20

V

Continuous Drain Cur-

rent RqJC

Steady

State

TC = 25°C

ID

58

A

TC = 100°C

41

Power Dissipation

RqJC

Steady

State

TC = 25°C

PD

167

W

Pulsed Drain Current

tp = 10 ms

IDM

240

A

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode)

IS

58

A

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 Vdc, VGS = 10 Vdc,

IL(pk) = 44.7 A, L = 0.3 mH, RG = 25 W)

EAS

300

mJ

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

TL

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Case (Drain) Steady State

RqJC

0.9

°C/W

Junction−to−Ambient (Note 1)

RqJA

33

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

http://onsemi.com

MARKING DIAGRAM

& PIN ASSIGNMENT

6412AN = Specific Device Code

G

= Pb−Free Device

A

= Assembly Location

Y

= Year

WW = Work Week

1

2

3

4

D2PAK

CASE 418B

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

V(BR)DSS

RDS(ON) MAX

ID MAX

(Note 1)

100 V

18.2 mW @ 10 V

58 A

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

NTP

6412ANG

AYWW

1

Gate

3

Source

4

Drain

2

Drain

1

Gate

3

Source

4

Drain

2

Drain

NTB

6412ANG

AYWW

G

S

D

N−Channel

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