NTP6413ANG datasheet(3/7 Pages) ONSEMI

Part #	NTP6413ANG

Description	N-Channel Power MOSFET 100 V, 42 A, 28 m廓

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NTB6413AN, NTP6413AN

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TYPICAL CHARACTERISTICS

0

20

40

60

80

100

01

23

4

5

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

TJ = 25°C

10 V

7.5 V

6.5 V

6.0 V

5.5 V

5.0 V

0

20

40

60

80

100

23

45

67

8

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS w 10 V

TJ = 125°C

TJ = −55°C

TJ = 25°C

0.01

0.02

0.03

0.04

56789

10

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Region versus Gate Voltage

ID = 42 A

TJ = 25°C

0.00

0.02

0.04

0.08

0.06

10

20

30

40

TJ = 125°C

TJ = 175°C

VGS = 10 V

TJ = 25°C

TJ = −55°C

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0.5

1

1.5

2

2.5

3

−50 −25

0

25

50

75

100

125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

ID = 42 A

VGS = 10 V

100

1000

10000

10

20

30

40

50

60

70

80

90 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

TJ = 125°C

TJ = 150°C

VGS = 0 V

0.05

0.06

Similar Part No. - NTP6413ANG

Manufacturer	Part #	Datasheet	Description
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