NTD4854N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction-to-Case (Drain)

1.6

°C/W

Junction-to-TAB (Drain)

3.5

Junction-to-Ambient – Steady State (Note 1)

60

Junction-to-Ambient – Steady State (Note 2)

105

1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

25

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

23

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate-to-Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.45

2.5

V

Negative Threshold Temperature

Coefficient

6.0

mV/

°C

Drain-to-Source On Resistance

2.9

3.6

m

W

3.6

4.7

Forward Transconductance

122

S

CHARGES AND CAPACITANCES

Input Capacitance

4600

pF

Output Capacitance

1100

Reverse Transfer Capacitance

578

Total Gate Charge

32.8

49.2

nC

Threshold Gate Charge

3.7

Gate-to-Source Charge

11.8

Gate-to-Drain Charge

12.6

Total Gate Charge

65

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

22.6

ns

Rise Time

40.7

Turn-Off Delay Time

25

Fall Time

17.6

Turn-On Delay Time

12.1

ns

Rise Time

17.6

Turn-Off Delay Time

41

Fall Time

8.5

3. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.