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NTD4863N-1G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NTD4863N-1G
Description  Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD4863N-1G Datasheet(HTML) 3 Page - ON Semiconductor

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NTD4863N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.96
1.2
V
TJ = 125°C
0.83
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
10.9
ns
Charge Time
ta
5.4
Discharge Time
tb
5.5
Reverse Recovery Charge
QRR
2.7
nC
PACKAGE PARASITIC VALUES
Source Inductance
LS
TA = 25°C
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
1.88
Gate Inductance
LG
3.46
Gate Resistance
RG
0.5
W
3. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.


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