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AP2213M-2.5TRG1 Datasheet(PDF) 11 Page - BCD Semiconductor Manufacturing Limited |
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AP2213M-2.5TRG1 Datasheet(HTML) 11 Page - BCD Semiconductor Manufacturing Limited |
11 / 22 page 500mA LOW NOISE LDO REGULATOR AP2213 Data Sheet 11 Nov. 2009 Rev. 1. 5 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit Ripple Rejection PSRR f=100Hz, IOUT=100µA75 dB Current Limit ILIMIT VOUT=0V 700 1000 mA Output Noise eno IOUT=50mA, COUT=2.2µF, 100pF from BYP to GND 260 Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V 0.18 Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V Enable Input Logic-low Current IIL VIL≤0.4V 0.01 1 µA VIL≤0.18V 2 Enable Input Logic-high Current IIH VIL≥2.0V 5 20 µA VIL≥2.0V 25 Thermal Resistance θJC TO-252-2 (1) 20 oC/W SOIC-8 45 SOT-223 31 Hz nV / Note 2: Specifications in bold type are limited to -40oC ≤TJ≤125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (- 40oC ≤TJ≤125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Electrical Characteristics (Continued) VIN=4.3V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2), unless otherwise specified. AP2213-3.3 Electrical Characteristics |
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