Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NTD5804N Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTD5804N
Description  Power MOSFET 40 V, 69 A, Single N?묬hannel, DPAK
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD5804N Datasheet(HTML) 1 Page - ON Semiconductor

  NTD5804N Datasheet HTML 1Page - ON Semiconductor NTD5804N Datasheet HTML 2Page - ON Semiconductor NTD5804N Datasheet HTML 3Page - ON Semiconductor NTD5804N Datasheet HTML 4Page - ON Semiconductor NTD5804N Datasheet HTML 5Page - ON Semiconductor NTD5804N Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 0
1
Publication Order Number:
NTD5804N/D
NTD5804N
Power MOSFET
40 V, 69 A, Single N−Channel, DPAK
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
Applications
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
"30
V
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TC = 25°C
ID
69
A
TC = 100°C
49
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
71
W
Pulsed Drain Current
tp = 10 ms
IDM
125
A
Operating Junction and Storage Temperature
TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
IS
30
A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V)
EAS
195
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
2.1
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
106
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
40 V
12 mW @ 5.0 V
RDS(on) MAX
ID MAX
V(BR)DSS
8.5 mW @ 10 V
http://onsemi.com
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain 3
Source
4
Drain
Y
= Year
WW
= Work Week
5804N = Device Code
G
= Pb−Free Package
69 A
G
S
N−CHANNEL MOSFET
D
DPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
4
4
Drain
2
Drain
1
Gate
3
Source


Similar Part No. - NTD5804N

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NTD5804N ONSEMI-NTD5804N Datasheet
79Kb / 6P
   Power MOSFET
November, 2016 ??Rev. 11
logo
SHENZHEN DOINGTER SEMIC...
NTD5804N DOINGTER-NTD5804N Datasheet
2Mb / 5P
   N-Channel MOSFET uses advanced trench technology
logo
ON Semiconductor
NTD5804NT4G ONSEMI-NTD5804NT4G Datasheet
79Kb / 6P
   Power MOSFET
November, 2016 ??Rev. 11
NTD5804N ONSEMI-NTD5804N_16 Datasheet
79Kb / 6P
   Power MOSFET
November, 2016 ??Rev. 11
More results

Similar Description - NTD5804N

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NTTFS005N04C ONSEMI-NTTFS005N04C Datasheet
201Kb / 7P
   Power MOSFET 40 V, 5.6 m, 69 A, Single N?묬hannel
January, 2019 ??Rev. 0
NTD5802NT4G ONSEMI-NTD5802NT4G Datasheet
130Kb / 7P
   Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK
August, 2011 ??Rev. 6
NTD5802N ONSEMI-NTD5802N Datasheet
135Kb / 6P
   Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK
April, 2009 ??Rev. 4
NVD5890NT4G ONSEMI-NVD5890NT4G Datasheet
116Kb / 7P
   Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK
January, 2012 ??Rev. 1
NTD5407N ONSEMI-NTD5407N Datasheet
72Kb / 6P
   Power MOSFET 40 V, 38 A, Single N?묬hannel, DPAK
October, 2005 ??Rev. 0
NTD5803N ONSEMI-NTD5803N Datasheet
111Kb / 6P
   Power MOSFET 40 V, 76 A, Single N?묬hannel, DPAK
December, 2008 ??Rev. 0
NTD5406N ONSEMI-NTD5406N Datasheet
133Kb / 5P
   Power MOSFET 40 V, 70 A, Single N?묬hannel, DPAK
May, 2009 ??Rev. 2
NTD5805N ONSEMI-NTD5805N Datasheet
132Kb / 6P
   Power MOSFET 40 V, 51 A, Single N?묬hannel, DPAK
March, 2009 ??Rev. 0
NVD5803N ONSEMI-NVD5803N Datasheet
106Kb / 6P
   Power MOSFET 40 V, 85 A, Single N?묬hannel, DPAK
April, 2010 ??Rev. 0
NVD5890N ONSEMI-NVD5890N Datasheet
217Kb / 8P
   Power MOSFET 40 V, 123 A, Single N?묬hannel DPAK
May, 2017 ??Rev. 2
More results


Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com