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NTD5804N Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD5804N Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 0 1 Publication Order Number: NTD5804N/D NTD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • These are Pb−Free Devices Applications • CCFL Backlight • DC Motor Control • Class D Amplifier • Power Supply Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS "20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS "30 V Continuous Drain Current (RqJC) (Note 1) Steady State TC = 25°C ID 69 A TC = 100°C 49 Power Dissipation (RqJC) (Note 1) TC = 25°C PD 71 W Pulsed Drain Current tp = 10 ms IDM 125 A Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C Source Current (Body Diode) IS 30 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V) EAS 195 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.1 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 106 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces. DPAK CASE 369C (Surface Mount) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENT 40 V 12 mW @ 5.0 V RDS(on) MAX ID MAX V(BR)DSS 8.5 mW @ 10 V http://onsemi.com 1 2 3 4 See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION 1 Gate 2 Drain 3 Source 4 Drain Y = Year WW = Work Week 5804N = Device Code G = Pb−Free Package 69 A G S N−CHANNEL MOSFET D DPAK CASE 369D (Straight Lead) STYLE 2 1 2 3 4 4 Drain 2 Drain 1 Gate 3 Source |
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