NTD6416ANLT4G datasheet(4/7 Pages) ONSEMI

Part #	NTD6416ANLT4G

Description	N-Channel Power MOSFET 100 V, 19 A, 74 m廓

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NTD6416ANL

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4

0

200

400

600

800

1000

1200

1400

0

1020

3040

506070

8090

100

TJ = 25°C

VGS = 0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

Ciss

Coss

Crss

0

5

10

15

20

25

QT

Qgd

Qgs

0

2

4

6

8

10

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

VDS = 80 V

ID = 19 A

TJ = 25°C

1

10

100

1000

1

10

100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

td(off)

tf

tr

td(on)

VDS = 80 V

ID = 19 A

VGS = 10 V

0

5

10

15

20

0.5 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

TJ = 25°C

VGS = 0 V

0.01

0.1

1

10

100

1

10

100

1000

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 10 V

SINGLE PULSE

TC = 25°C

10

ms

100

ms

1 ms

10 ms

dc

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Resistive Switching Time Variation

versus Gate Resistance

0

10

20

30

40

50

25

50

75

100

125

150

175

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 12. Resistive Switching Time Variation

versus Gate Resistance

ID = 18.2 A

100

80

60

40

20

0

VDS

VGS

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ON Semiconductor	NTD6416ANLT4G	122Kb / 7P	N-Channel Power MOSFET 100 V, 19 A, 74 m June, 2012 ??Rev. 4
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