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NTGD3147F Datasheet(PDF) 1 Page - ON Semiconductor |
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NTGD3147F Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 0 1 Publication Order Number: NTGD3147F/D NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • Fast Switching • Low Gate Change • Low RDS(on) • Low VF Schottky Diode • Independently Connected Devices to Provide Design Flexibility • This is a Pb−Free Device Applications • DC−DC Converters • Portable Devices like PDA’s, Cellular Phones, and Hard Drives MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C ID −2.2 −1.6 A t ≤ 5 s TA = 25°C −2.5 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.0 W t ≤ 5 s 1.3 Pulsed Drain Current tp = 10 ms IDM −7.5 A Operating Junction and Storage Temperature TJ, TSTG −25 to 150 °C Source Current (Body Diode) IS −0.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current IF 1 A THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady−State (Note 1) RqJA 125 °C/W Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 100 °C/W Junction−to−Ambient Steady−State (Note 2) RqJA 235 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces). http://onsemi.com P−Channel MOSFET Schottky Diode −20 V 20 V 200 mW @ −2.5 V 145 mW @ −4.5 V 1.0 A RDS(on) Max 0.45 V ID Max V(BR)DSS P−CHANNEL MOSFET SCHOTTKY DIODE VR Max IF Max VF Max −2.2 A −1.6 A K A TC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) TSOP−6 CASE 318G STYLE 15 MARKING DIAGRAM TC MG G 1 1 1 2 3 6 5 4 A S G K N/C D (Top View) PIN CONNECTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION G S D |
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