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NTGD3147F Datasheet(PDF) 2 Page - ON Semiconductor |
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NTGD3147F Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTGD3147F http://onsemi.com 2 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA −20 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 14.2 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V TJ = 25°C −1.0 mA TJ = 85°C −10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.5 −0.95 −1.5 V Gate Threshold Temperature Coefficient VGS(TH)/TJ 3.0 mV/°C Drain−to−Source On Resistance RDS(on) VGS = −4.5 V ID = −2.2 A 90 145 mW VGS = −2.5 V ID = −1.6 A 140 200 Forward Transconductance gFS VDS = −5.0 V, ID = −2.2 A 4.5 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = −10 V 400 pF Output Capacitance COSS 75 Reverse Transfer Capacitance CRSS 40 Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −10 V, ID = −2.2 A 3.8 5.5 nC Threshold Gate Charge QG(TH) 0.5 Gate−to−Source Charge QGS 0.9 Gate−to−Drain Charge QGD 1.0 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = −4.5 V, VDS = −10 V, ID = −1.0 A, RG = 6.0 W 7.5 ns Rise Time tr 6.2 Turn−Off Delay Time td(OFF) 14.5 Fall Time tf 18.4 DRAIN−TO−SOURCE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V ID = −0.8 A TJ = 25°C −0.8 1.2 V ns Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = −0.8 A 12 Charge Time Ta 8.0 Discharge Time Tb 4.0 Reverse Recovery Time QRR 4.0 nC 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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