NTGD3147F datasheet(2/7 Pages) ONSEMI

Part #	NTGD3147F

Description	Power MOSFET and Schottky Diode??0 V, ??.5 A, P?묬hannel with Schottky Barrier Diode, TSOP??

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NTGD3147F

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

14.2

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −16 V

TJ = 25°C

−1.0

mA

TJ = 85°C

−10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.5

−0.95

−1.5

V

Gate Threshold Temperature Coefficient

VGS(TH)/TJ

3.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V

ID = −2.2 A

90

145

mW

VGS = −2.5 V

ID = −1.6 A

140

200

Forward Transconductance

gFS

VDS = −5.0 V, ID = −2.2 A

4.5

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −10 V

400

pF

Output Capacitance

COSS

75

Reverse Transfer Capacitance

CRSS

40

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −10 V,

ID = −2.2 A

3.8

5.5

nC

Threshold Gate Charge

QG(TH)

0.5

Gate−to−Source Charge

QGS

0.9

Gate−to−Drain Charge

QGD

1.0

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDS = −10 V,

ID = −1.0 A, RG = 6.0 W

7.5

ns

Rise Time

tr

6.2

Turn−Off Delay Time

td(OFF)

14.5

Fall Time

tf

18.4

DRAIN−TO−SOURCE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V

ID = −0.8 A

TJ = 25°C

−0.8

1.2

V

ns

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −0.8 A

12

Charge Time

Ta

8.0

Discharge Time

Tb

4.0

Reverse Recovery Time

QRR

4.0

nC

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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