NTLJD3183CZ datasheet(1/9 Pages) ONSEMI

Part #	NTLJD3183CZ

Description	Power MOSFET 20 V/??0 V, 4.7 A/??.0 A, 關Cool??Complementary, 2x2 mm, WDFN Package

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 9 page

December, 2008 − Rev. 0

1

Publication Order Number:

NTLJD3183CZ/D

NTLJD3183CZ

Power MOSFET

20 V/−20 V, 4.7 A/−4.0 A, mCoolt

Complementary, 2x2 mm, WDFN Package

Features

• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent

Thermal Conduction

• Lowest RDS(on) in 2x2 mm Package

• Footprint Same as SC−88 Package

• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

• ESD Protected

• This is a Pb−Free Device

Applications

• Optimized for Battery and Load Management Applications in

Portable Equipment

• Load Switch

• Level Shift Circuits

• DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

20

V

Gate−to−Source Voltage

VGS

±8.0

V

N−Channel

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

3.8

A

TA = 85°C

2.7

t ≤ 5 s

TA = 25°C

4.7

P−Channel

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

−3.2

A

TA = 85°C

−2.3

t ≤ 5 s

TA = 25°C

−4.0

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.5

W

t ≤ 5 s

2.3

N−Channel

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

2.6

A

TA = 85°C

1.9

P−Channel

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

−2.2

A

TA = 85°C

−1.6

Power Dissipation

(Note 2)

Steady

State

TA = 25°C

PD

0.71

W

Pulsed Drain Current

N−Ch

tp = 10 ms

IDM

18

A

P−Ch

−16

Operating Junction and Storage Temperature

TJ, TSTG

−55 to

150

°C

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size

of 30 mm2, 2 oz Cu.

http://onsemi.com

JN = Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

JNMG

G

1

2

3

6

5

4

WDFN6

CASE 506AN

MARKING

DIAGRAM

Device

Package

Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

D2

D1

Pin 1

1

2

3

6

5

4

S1

G1

D2

D1

G2

S2

(Top View)

PIN CONNECTIONS

D1

D2

NTLJD3183CZTAG

WDFN6

(Pb−Free)

3000/Tape & Reel

N−Channel

20 V

P−Channel

−20 V

86 mW @ 2.5 V

68 mW @ 4.5 V

100 mW @ −4.5 V

144 mW @ −2.5 V

RDS(on) MAX

4.2 A

−3.3 A

ID MAX

V(BR)DSS

120 mW @ 1.8 V

200 mW @ −1.8 V

NTLJD3183CZTBG

WDFN6

(Pb−Free)

3000/Tape & Reel

4.7 A

3.5 A

−4.0 A

−2.8 A

Similar Part No. - NTLJD3183CZ

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTLJD3181PZ	126Kb / 7P	Power MOSFET ??0 V, ??.0 A, Cool Dual P?묬hannel, ESD, 2x2 mm WDFN Package December, 2008 ??Rev. 0
	NTLJD3181PZTAG	126Kb / 7P	Power MOSFET ??0 V, ??.0 A, Cool Dual P?묬hannel, ESD, 2x2 mm WDFN Package December, 2008 ??Rev. 0
	NTLJD3181PZTBG	126Kb / 7P	Power MOSFET ??0 V, ??.0 A, Cool Dual P?묬hannel, ESD, 2x2 mm WDFN Package December, 2008 ??Rev. 0
	NTLJD3182FZ	134Kb / 8P	Power MOSFET and Schottky Diode ??0 V, ??.0 A, 關Cool??Single P?묬hannel & Schottky Barrier Diode, ESD December, 2008 ??Rev. 0
	NTLJD3182FZTAG	134Kb / 8P	Power MOSFET and Schottky Diode ??0 V, ??.0 A, 關Cool??Single P?묬hannel & Schottky Barrier Diode, ESD December, 2008 ??Rev. 0

More results

Similar Description - NTLJD3183CZ

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTLJD3119C	173Kb / 10P	Power MOSFET 20 V/??0 V, 4.6 A/??.1 A, uCool Complementary, 2x2 mm, WDFN Package October, 2006 ??Rev. 0
	NTLJD3181PZ	126Kb / 7P	Power MOSFET ??0 V, ??.0 A, Cool Dual P?묬hannel, ESD, 2x2 mm WDFN Package December, 2008 ??Rev. 0
	NTLJS3113P	79Kb / 6P	Power MOSFET ??0 V, ??.7 A, uCool TM Single 2x2 mm, WDFN Package May, 2006 ??Rev. 3
	NTLJS1102P	119Kb / 7P	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package November, 2008 ??Rev. 0
	NTLUS4195PZ	180Kb / 6P	Power MOSFET ??0 V, ??.0 A, Cool Single P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package June, 2009 ??Rev. 0
	NTHC5513	89Kb / 10P	Power MOSFET 20 V, 3.9 A / ??.0 A, Complementary ChipFET-TM October, 2004 ??Rev. 4
	NTLUS3A90PZTAG	145Kb / 6P	??0 V, ??.0 A, Cool Single P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package September, 2010 ??Rev. 2
	NTLJS4114N	84Kb / 6P	Power MOSFET 30 V, 7.8 A, uCool Single N?묬hannel, 2x2 mm WDFN Package November, 2006 ??Rev. 1
	NTLUD3A260PZTAG	112Kb / 6P	Power MOSFET ??0 V, ??.1 A,Cool Dual P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package September, 2010 ??Rev. 1
	NTLUD3191PZ	147Kb / 6P	Power MOSFET ??0 V, ??.8 A, Cool Dual P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package April, 2009 ??Rev. 1

More results

NTLJD3183CZ Datasheet(PDF) 1 Page - ON Semiconductor

NTLJD3183CZ Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NTLJD3183CZ

Similar Description - NTLJD3183CZ

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL