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NTLJD3183CZ Datasheet(PDF) 2 Page - ON Semiconductor |
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NTLJD3183CZ Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page NTLJD3183CZ http://onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit SINGLE OPERATION (SELF−HEATED) Junction−to−Ambient – Steady State (Note 3) RqJA 83 °C/W Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) RqJA 58 °C/W Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 133 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 40 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS N VGS = 0 V ID = 250 mA 20 V P ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ N Ref to 25°C ID = 250 mA 15 mV/°C P ID = −250 mA 13 Zero Gate Voltage Drain Current IDSS N VGS = 0 V, VDS = 16 V TJ = 25°C 1.0 mA P VGS = 0 V, VDS = −16 V −1.0 N VGS = 0 V, VDS = 16 V TJ = 85°C 10 P VGS = 0 V, VDS = −16 V −10 Gate−to−Source Leakage Current IGSS N VDS = 0 V, VGS = ±8.0 V ±10 mA P ±10 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) N VGS = VDS ID = 250 mA 0.4 1.0 V P ID = −250 mA −0.4 −1.0 Gate Threshold Temperature Coefficient VGS(TH)/TJ N Ref to 25°C ID = 250 mA −3.0 mV/°C P ID = −250 mA 2.0 Drain−to−Source On Resistance RDS(on) N VGS = 4.5 V , ID = 2.0 A 34 68 mW P VGS = −4.5 V , ID = −2.0 A 68 100 N VGS = 2.5 V , ID = 2.0 A 42 86 P VGS = −2.5 V, ID = −2.0 A 90 144 N VGS = 1.8 V , ID = 1.7 A 53 120 P VGS = −1.8 V, ID = −1.7 A 125 200 Forward Transconductance gFS N VDS = 5.0 V, ID = 2.0 A 7.0 S P VDS = −5.0 V , ID = −2.0 A 6.5 |
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