NTMS4177P datasheet(4/5 Pages) ONSEMI

Part #	NTMS4177P

Description	Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8

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NTMS4177P

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TYPICAL PERFORMANCE CURVES

Figure 7. Capacitance Variation

Figure 8. Gate-To-Source and

Drain-To-Source Voltage vs. Total Charge

-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

VGS = 0 V

TJ = 25°C

Figure 10. Diode Forward Voltage vs. Current

DRAIN-TO-SOURCE VOLTAGE (VOLTS)

500

05

10

TJ = 25°C

Ciss

Coss

Crss

15

25

0

2000

VGS = 0 V

QG, TOTAL GATE CHARGE (nC)

ID = -11.4 A

TJ = 25°C

VGS

QGS

RG, GATE RESISTANCE (OHMS)

VDD = -15 V

ID = -1 A

VGS = -10 V

tr

td(on)

tf

td(off)

QGD

QT

1000

1500

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = -20 A

20

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = -20 V

SINGLE PULSE

TC = 25°C

dc

10 ms

1 ms

100

ms

10

ms

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

3000

30

1

0

4

6

2

3

5

10

8

10

7

9

0

8

12

4

16

20

VDS

100

1

10

100

1

1000

1

0.9

0.5

0.6

0.7

0

4

2

3

0.8

10

0.1

10

100

1

100

1

0.1

0.01

25

50

75

100

0

100

50

75

150

125

10

2500

6

10

2

14

18

20

30

3500

4500

4000

40

60

50

125

150

175

200

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