NTR3162P datasheet(3/6 Pages) ONSEMI

Part #	NTR3162P

Description	Power MOSFET ??0 V, ??.6 A, Single P?묬hannel, SOT??3

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NTR3162P

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P−CHANNEL TYPICAL CHARACTERISTICS

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

TJ = 25°C

−1.5 V

−2.0 V

−1.2 V

VGS = −5 V − −2.5 V

−1.8 V

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

0.5

0.75

1

1.25

1.5

1.75

2

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (V)

125°C

TJ = −55°C

25°C

VDS = −5 V

0

0.05

0.10

0.15

0.20

0.25

0.30

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE VOLTAGE (V)

ID = −2.2 A

TJ = 25°C

0

0.05

0.10

0.15

0.20

0.25

0.30

0

1

2345

67

89

10

−ID, DRAIN CURRENT (A)

TJ = 25°C

VGS = −2.5 V

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS = −4.5 V

VGS = −1.8 V

VGS = −1.5 V

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

−50

−25

0

25

50

75

100

125

150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

ID = −2.2 A

VGS = −4.5 V

1000

10000

100000

02

46

8

10

12

14

16

18

20

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 125°C

VGS = 0 V

TJ = 150°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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