NTR4171P datasheet(4/6 Pages) ONSEMI

Part #	NTR4171P

Description	Power MOSFET ??0 V, ??.5 A, Single P?묬hannel, SOT??3

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NTR4171P

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TYPICAL CHARACTERISTICS

QGS

−VDS

QT

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

30

25

20

15

10

5.0

0

100

300

500

600

900

1000

1100

14

12

10

8.0

6.0

4.0

2.0

0

2.0

4.0

6.0

8.0

10

12

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1.0

10

100

1000

1.1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.1

1.0

10

Figure 11. Threshold Voltage

Figure 12. Single Pulse Maximum Power

Dissipation

TJ, TEMPERATURE (°C)

SINGLE PULSE TIME (s)

125

100

75

50

25

0

−25

−50

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.5

1000

100

10

1.0

0.1

0.01

0.001

0

5.0

10

15

20

25

30

800

700

400

200

Ciss

Coss

Crss

VGS = 0 V

TJ = 25°C

f = 1 MHz

16

VDS = −15 V

TJ = 25°C

ID = −3.5 A

0

2.0

4.0

6.0

8.0

10

12

14

16

−VGS

QGD

VGS = −10 V

VDD = −15 V

ID = −3.5 A

td(off)

td(on)

tf

tr

1.0

1.2

TJ = 25°C

TJ = 125°C

TJ = −55°C

TJ = 150°C

150

ID = −250 mA

1.1

1.3

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