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LY6112816E Datasheet(PDF) 10 Page - Lyontek Inc. |
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LY6112816E Datasheet(HTML) 10 Page - Lyontek Inc. |
10 / 13 page LY6112816 Rev. 1.1 5V 128K X 16 BIT HIGH SPEED CMOS SRAM Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC for Data Retention VDR CE# V ≧ CC - 0.2V 2.0 - 5.5 V 15/20 - 0.05 2 mA Data Retention Current IDR VCC = 2.0V, CE# V ≧ CC - 0.2V other pins at 0.2V or VCC-0.2V 15/20LL - 10 50 µA Chip Disable to Data Retention Time tCDR See Data Retention Waveforms (below) 0 - - ns Recovery Time tR tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM Vcc CE# VDR ≧ 2.0V CE# V ≧ cc-0.2V Vcc(min.) VIH tR tCDR VIH Vcc(min.) |
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