LY6112816E datasheet(10/13 Pages) LYONTEK

Part #	LY6112816E

Description	5V 128K X 16 BIT HIGH SPEED CMOS SRAM

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Manufacturer	LYONTEK [Lyontek Inc.]

Direct Link	http://www.lyontek.com.tw

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10 / 13 page

LY6112816

Rev. 1.1

5V 128K X 16 BIT HIGH SPEED CMOS SRAM

Lyontek Inc. reserves the rights to change the specifications and products without notice.

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

9

®

DATA RETENTION CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

VCC for Data Retention

VDR

CE#

V

≧ CC - 0.2V

2.0

-

5.5

V

15/20

-

0.05

2

mA

Data Retention Current

IDR

VCC = 2.0V, CE#

V

≧ CC - 0.2V

other pins at 0.2V or VCC-0.2V 15/20LL

-

10

50

µA

Chip Disable to Data

Retention Time

tCDR

See Data Retention

Waveforms (below)

0

-

ns

Recovery Time

tR

tRC*

-

ns

tRC* = Read Cycle Time

DATA RETENTION WAVEFORM

Vcc

CE#

VDR ≧ 2.0V

CE#

V

≧

cc-0.2V

Vcc(min.)

VIH

tR

tCDR

VIH

Vcc(min.)

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LY6112816E Datasheet(PDF) 10 Page - Lyontek Inc.

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