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▪ Tel : 82-31-250-5011
▪ All specifications may change without notice.
▪ rfsales@rfhic.com
▪ Version 5.3
R
RF
FM
M00994477--1100
Product Features
Application
• Small size by using simple matching circuit board
• High Efficiency
• Single Supply Voltage
• High Linearity, 10W Power
• Heat sink 99.9% copper, gold plate
• High Productivity
• Low Manufacturing Cost
• GaAs MESFET
•
GSM Repeater
•
RF Sub-Systems
• Base Station
Description
The power amplifier module is designed for base stations and cell extenders
as cellular and GSM , IMT-2000, ISM, MMDS frequency systems.
GaAs MESFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
Dimensions in mm
Functional Diagram
PARAMETER
Min
Typ
Max
Frequency Range (MHz)
935 ~ 960
Small Signal Gain (dB)
16
Gain Flatness (Max.)
± 0.5dB @ 50MHz BW
Gain Variation Over Temp
± 0.5dB
± 1.0dB
VSWR (Input)
2 : 1
Output P1dB
37 dBm
38 dBm
CDMA Power (1 FA)
32 dBm
Vcc / Idc (CDMA Only)
9V / 1.2A
OIP3 @ tone / 27 dBm
49 dBm
50 dBm
Noise Figure (Typ.)
5 dB
Shut Down (On/Off)
＋
5V @ 25㎂ / 0V
In/Out Connectors
SMA Female (50 Ω)
Operating Temp Range
-20°C ~ +70°C
Dimensions (W×L×H)
29.0 × 30.2 × 9.0 [mm] (RFM)
48.0 × 54.2 × 22.0 [mm] (RFH)
NOTE
* CDMA : 1.23MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available
@ ±750KHz offset in 30KHz resolution bandwidth
@ ±1.98MHz offset in 30KHz resolution bandwidth
* RFM : Internally Matched Module
* RFH : Housing Type
: RF Connector
: SMA Female
Package : DP-36
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