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2N1671A Datasheet(PDF) 2 Page - Comset Semiconductor |
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2N1671A Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 2 page COMSET SEMICONDUCTORS 2/2 2N1671 – 2N1671A – 2N1671B ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit 2N1671 - - -12 2N1671A - - -12 IEB2O Emitter Reverse Current VB2E=30 V, IB1= 0 2N1671B - - -0.2 µA 2N1671 - - 5 2N1671A - - 5 VEB1(sat) Emitter saturation Voltage VB2B1 = 10 V, IE= 50 mA 2N1671B - - 5 V 2N1671 4.7 - 9.1 2N1671A 4.7 - 9.1 RBBO Interbase Resistance VB2B1 = 3 V, , IE= 0 2N1671B 4.7 - 9.1 K 2N1671 0.47 - 0.62 2N1671A 0.47 - 0.62 η Intrinsic stand-off ratio VB2B1= 10 V 2N1671B 0.47 - 0.62 - 2N1671 - - 8 2N1671A - - 8 IV Valley Current VB2B1= 10 V, RB2= 100 2N1671B - - 8 mA 2N1671 - - 25 2N1671A - - 25 IP Peak Current VB2B1= 25 V 2N1671B - - 6 µA MECHANICAL DATA CASE TO-5 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. |
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