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BDT82 Datasheet(PDF) 3 Page - Comset Semiconductor |
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BDT82 Datasheet(HTML) 3 Page - Comset Semiconductor |
3 / 3 page COMSET SEMICONDUCTORS 3/3 PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 BDT82 BDT84 BDT86 -VBE Base-Emitter voltage (1) -IC=5 A , -VCE=4 V BDT88 -- 1.5 V Symbol Ratings Test Condition(s)Sec Min Typ Mx Unit -IS/B Second breakdown collector current -VCE=50 V , tP = 100 ms 2.5 - - A fT Transition frequency -VCE=10 V , -IC=0.5 A , f=1 MHz -20- MHz ton Turn-on time -IC=7 A , -IB1 = IB2 =0.7 A -- 1 Toff Turn-off time -IC=7 A , -IB1 = IB2 =0.7 A -- 2 µs (1) Pulse Duration = 300 µs, δ <= 2% MECHANICAL DATA CASE TO-220 DIMENSIONS mm inches A 9,86 0,39 B 15,73 0,62 C 13,37 0,52 D 6,67 0,26 E 4,44 0,17 F 4,21 0,16 G 2,99 0,11 H 17,21 0,68 L 1,29 0,05 M 3,6 0,14 N 1,36 0,05 P 0,46 0,02 R 2,1 0,08 S 5 0,19 T 2,52 0,098 U 0,79 0,03 Pin 1 : Base Pin 2 : Collector Pin 3 : Emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. |
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Similar Description - BDT82 |
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