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BDX64B Datasheet(PDF) 2 Page - Comset Semiconductor |
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BDX64B Datasheet(HTML) 2 Page - Comset Semiconductor |
2 / 4 page Page 2 of 4 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case BDX64 BDX64A BDX64B BDX64C 1.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX64 -60 - - BDX64A -80 - - BDX64B -100 - - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=-0.1 A, IB=0, L=25mH BDX64C -120 - - V VCE=-30 V BDX64 - - VCE=-40 V BDX64A - - VCE=-50 V BDX64B - - ICEO Collector Cutoff Current VCE=-60 V BDX64C - - -1.0 mA IEBO Emitter Cutoff Current VBE=-5 V BDX64 BDX64A BDX64B BDX64C - - -5.0 mA VCBO=-60 V - - 0.2 VCBO=-40 V TCASE=200°C BDX64 - - 2 VCBO=-80 V - - 0.2 VCBO=-50 V TCASE=200°C BDX64A - - 2 VCBO=-100 V - - 0.2 VCBO=-60 V TCASE=200°C BDX64B - - 2 VCBO=-120 V - - 0.2 ICBO Collector-Base Cutoff Current VCBO=-70 V TCASE=200° BDX64C - - 2 - VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A, IB=-20 mA BDX64 BDX64A BDX64B BDX64C - - -2 V VF Forward Voltage (pulse method) IF=5 A BDX64 BDX64A BDX64B BDX64C - 1.8 - V |
Similar Part No. - BDX64B |
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Similar Description - BDX64B |
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