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CS684TO3 Datasheet(PDF) 2 Page - Comset Semiconductor

Part No. CS684TO3
Description  PNP SILICON DARLINGTON POWER TRANSISTORS
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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CS684 TO3
COMSET SEMICONDUCTORS
2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Mx
Unit
IE=0 , -VCB= -VCEOMAX=140 V
-
-
0,2
-ICBO
Collector cut-off current
IE=0 , -VCB= -1/2VCBOMAX= 70V,Tj= 150°C
-
-
1
mA
-ICEO
Collector cut-off current
IB=0 , -VCE= -1/2VCEOMAX=70 V
-
-
0,2
mA
-IEBO
Emitter cut-offcurrent
IC=0, -VEB=5 V
-
-
5
mA
-VCE(SAT)
Collector-Emitter saturation
Voltage
-IC=1.5 A, -IB=6 mA
-
-
2
V
-VCE=3 V, -IC=500 mA
-
2000
-
-VCE=3 V, -IC=1,5 A
750
-
-
hFE
DC Current Gain
-VCE=3 V, -IC=4 A
-
750
-
-VBE
Base-Emitter Voltage(1&2)
-VCE=3 V, -IC=1,5 A
-
-
2,5
V
hfe
Small signal current gain
-VCE=3 V, -IC=1,5 A, f= 1 MHz
10
-
-
fhfe
Ut-off frequency
-VCE=3 V, -IC=1,5 A
-
60
-
kHz
VF
Diode forward voltage
IF=1,5 A
-
1,5
-
V
-I(SB)
Second-breakdown
collector current
-VCE=50 V, tP= 20ms,non rep., without
heatsink
0,8
-
-
A
ton
Turn-on time
-
0,8
2
toff
Turn-off time
-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V
-
4,5
8
µs
1.
Measured under pulse conditions :tP <300µs, δ <2%.
2.
VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51
1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Base
Pin 2 :
Emitter
Case :
Collector




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