TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,

TIC225N, TIC225S

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SEMICONDUCTORS

DESCRIPTION

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state

to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

ABSOLUTE MAXIMUM RATINGS

Value

Unit

Symbol

Ratings

A

B

C

D

E

M

S

N

Repetitive peak off-state voltage

(see Note1)

100 200 300 400 500 600 700 800

V

Full-cycle RMS on-state current at (or

below) 70°C case temperature (see note2)

8

A

Peak on-state surge current full-sine-wave

(see Note3)

70

A

Peak on-state surge current half-sine-wave

(see Note4)

8

A

Peak gate current

± 1

A

Peak gate power dissipation at (or below)

85°C case temperature (pulse width ≤200

µs)

2.2

W

Average gate power dissipation at (or

below) 85°C case (see Note5)

0.9

W

Operating case temperature range

-40 to +110

°C

Storage temperature range

-40 to +125

°C

Lead temperature 1.6 mm from case for 10

seconds

230

°C

SILICON BIDIRECTIONAL TRIODE THYRISTOR

•

Sensitive gate triacs

•

8 A RMS

•

70 A Peak

•

Glass Passivated Wafer

•

100 V to 800 V Off-State Voltage

•

•

Compliance to ROHS