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CZRERT52C3V9-HF Datasheet(PDF) 1 Page - Comchip Technology |
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CZRERT52C3V9-HF Datasheet(HTML) 1 Page - Comchip Technology |
1 / 6 page Voltage 2 to 39 Volts Power 150 mWatts Page 1 QW-G2011 Features 150mW Power Dissipation. High Voltages from 2 ~ 39 V. Designed for mounting on small surface. Extremely thin/leadless package. Pb free product. Mechanical data Case: 0503(1308)Standard package Molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Weight: gram(approx.). Halogen free. 0.0011 Peak ESD voltage capability (IEC 61000-4-2) Parameter Symbol Value 0.9 150 8 Unit V mW Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load( JEDEC method ) 2.0 A Maximum Rating AND Electrical Characteristics IFSM PD VF VPV kV Maximum Forward Voltage Drop at IF = 10 mA O Maximum Power Dissipation at 25 C REV:A SMD Diodes Specialist Operating Junction and Storage Temperature Range -55 to +125 TJ OC (RoHS Device) CZRERT52C2-HF Thru CZRERT52C39-HF SMD Zener Diode Comchip Technology CO., LTD. 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.022(0.55) 0.018(0.45) Dimensions in inches and (millimeter) 0503(1308) 0.022(0.55) Typ. 0.016(0.40) Typ. |
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