SEMIX352GAR128DS datasheet(2/5 Pages) SEMIKRON

Part #	SEMIX352GAR128DS

Description	SPT IGBT Modules

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Manufacturer	SEMIKRON [Semikron International]

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SEMiX352GAR128Ds

2

Rev. 8 – 02.12.2008

td(on)

VCC = 600 V

IC =200 A

Tj = 125 °C

RG on =3 Ω

RG off =3 Ω

230

ns

tr

55

ns

Eon

20

mJ

td(off)

585

ns

tf

90

ns

Eoff

21

mJ

Rth(j-c)

per IGBT

0.083

K/W

Rth(j-s)

per IGBT

K/W

Inverse diode

VF = VEC

IF =200 A

VGE =0V

chiplevel

Tj =25°C

2.0

2.5

V

Tj = 125 °C

1.8

2.3

V

VF0

Tj =25°C

0.75

1.1

1.45

V

Tj = 125 °C

0.50.851.2

V

rF

Tj =25°C

3.8

4.5

5.3

mΩ

Tj = 125 °C

4.0

4.8

5.5

mΩ

IRRM

IF =200 A

di/dtoff = 5350 A/µs

VGE =-15 V

VCC = 600 V

Tj = 125 °C

240

A

Qrr

Tj = 125 °C

31

µC

Err

Tj = 125 °C

11

mJ

Rth(j-c)

per diode

0.15

K/W

Rth(j-s)

per diode

K/W

Freewheeling diode

VF = VEC

IF =200 A

VGE =0V

chiplevel

Tj =25°C

2.0

2.5

V

Tj = 125 °C

1.8

2.3

V

VF0

Tj =25°C

0.75

1.1

1.45

V

Tj = 125 °C

0.50.851.2

V

rF

Tj =25°C

3.8

4.5

5.3

mΩ

Tj = 125 °C

4.0

4.8

5.5

mΩ

IRRM

IF =200 A

di/dtoff = 5320 A/µs

VGE =-15 V

VCC = 600 V

Tj = 125 °C

240

A

Qrr

Tj = 125 °C

31

µC

Err

Tj = 125 °C

11

mJ

Rth(j-c)

per diode

0.15

K/W

Rth(j-s)

per diode

K/W

Module

LCE

18

nH

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

mΩ

TC = 125 °C

1mΩ

Rth(c-s)

per module

0.045

K/W

Ms

to heat sink (M5)

3

5

Nm

Mt

to terminals (M6)

2.5

5

Nm

w

250

g

Temperature sensor

R100

Tc=100°C (R25=5 kΩ)

0,493

±5%

kΩ

B100/125

R(T)=R100exp[B100/125(1/T-1/T100)];

T[K];

3550

±2%

K

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

SEMiX®2s

GAR

SPT IGBT Modules

SEMiX352GAR128Ds

Preliminary Data

Features

• Homogeneous Si

• SPT = Soft-Punch-Through technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications

• AC inverter drives

•UPS

• Electronic welders up to 20 kHz

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