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SEMIX403GB128DS Datasheet(PDF) 1 Page - Semikron International |
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SEMIX403GB128DS Datasheet(HTML) 1 Page - Semikron International |
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1 / 6 page  SEMiX403GB128Ds © by SEMIKRON Rev. 9 – 16.12.2009 1 SEMiX® 3s GB SPT IGBT Modules SEMiX403GB128Ds Features • Homogeneous Si • SPT = Soft-Punch-Through technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic welders up to 20 kHz Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150 °C Tc =25°C 418 A Tc =80°C 298 A ICnom 225 A ICRM ICRM = 2xICnom 450 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150 °C Tc =25°C 342 A Tc =80°C 235 A IFnom 225 A IFRM IFRM = 2xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =25°C 2000 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =225 A VGE =15V chiplevel Tj =25°C 1.9 2.3 V Tj = 125 °C 2.1 2.55 V VCE0 Tj =25°C 11.15 V Tj = 125 °C 0.9 1.05 V rCE VGE =15V Tj =25°C 4.0 5.1 mΩ Tj = 125 °C 5.3 6.7 mΩ VGE(th) VGE=VCE, IC = 9 mA 4.5 5 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 125 °C mA Cies VCE =25 V VGE =0V f=1MHz 20.8 nF Coes f=1MHz 1.38 nF Cres f=1MHz 0.87 nF QG VGE =- 8 V...+ 15 V 2130 nC RGint Tj =25°C 1.67 Ω td(on) VCC = 600 V IC =225 A RG on =4 Ω RG off =4 Ω Tj = 125 °C 145 ns tr Tj = 125 °C 60 ns Eon Tj = 125 °C 20 mJ td(off) Tj = 125 °C 575 ns tf Tj = 125 °C 70 ns Eoff Tj = 125 °C 23 mJ Rth(j-c) per IGBT 0.075 K/W |
Similar Part No. - SEMIX403GB128DS_09 |
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Similar Description - SEMIX403GB128DS_09 |
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