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SEMIX854GB176HDS Datasheet(PDF) 2 Page - Semikron International |
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SEMIX854GB176HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX854GB176HDs 2 03.04.2008 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IFnom = 600A VGE =0V chiplevel Tj = 25°C 1.7 1.9 V Tj = 125°C 1.7 1.9 V VF0 Tj = 25°C 0.9 1.1 1.3 V Tj = 125°C 0.7 0.9 1.1 V rF Tj = 25°C 1.0 1.0 1.0 mΩ Tj = 125°C 1.3 1.3 1.3 mΩ IRRM IFnom = 600A di/dtoff = 8000A/µs VGE = -15V VCC = 1200V Tj = 125°C 730 A Qrr Tj = 125°C 220 µC Err Tj = 125°C 170 mJ Rth(j-c)D per diode 0.081 K/W Module LCE 22 nH RCC'+EE' res., terminal-chip TC = 25°C 0.7 mΩ TC = 125°C 1mΩ Rth(c-s) per module 0.03 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm w 400 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX®4s GB Trench IGBT Modules SEMiX854GB176HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • AC inverter drives •UPS • Electronic welders Remarks |
Similar Part No. - SEMIX854GB176HDS_08 |
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Similar Description - SEMIX854GB176HDS_08 |
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