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SKM50GB12V Datasheet(PDF) 2 Page - Semikron International |
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SKM50GB12V Datasheet(HTML) 2 Page - Semikron International |
2 / 3 page SKM50GB12V 2 Rev. 0 – 23.12.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =50 A VGE =0V chip Tj =25°C 2.2 2.5 V Tj = 150 °C 2.2 2.5 V VF0 Tj =25°C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V rF Tj =25°C 18.4 20.8 mΩ Tj = 150 °C 25.6 28.0 mΩ IRRM IF =50 A di/dtoff = 1380 A/µs VGE =±15 V VCC = 600 V Tj = 150 °C 35 A Qrr Tj = 150 °C 8.7 µC Err Tj = 150 °C 3.6 mJ Rth(j-c) per diode 0.84 K/W Module LCE 30 nH RCC'+EE' terminal-chip TC =25°C 0.65 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.04 0.05 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm Nm w 160 g SEMITRANS® 2 GB SKM50GB12V Target Data Features •VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic welders at fsw up to 20 kHz |
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