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B58610A0000A001 Datasheet(PDF) 5 Page - EPCOS |
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B58610A0000A001 Datasheet(HTML) 5 Page - EPCOS |
5 / 8 page Pressure sensors Barometric pressure transducer for SMT ASB 1200 E Preliminary data AS SEN PD 2009-08-03 Please read Cautions and warnings and Page 5 of 8 Important notes at the end of this document. Symbols and Terms 1) Maximum power supply VDD This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage. 2) Operating temperature range Ta This is the operating Temperature range Ta,min to Ta,max. Because most of the sensor parameters depend on assembling conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer fully assembled. For design verification and process control samples are tested over a reduced measuring temperature range of Tmeas,min to Tmeas,max. 3) Storage temperature range Tst If the pressure sensor dies are stored in the temperature range Tst,min to Tst,max without applied voltage power supply, this will not affect the performance of the pressure sensor dies. 4) Operating pressure range pr In the operating pressure range 0 to pr,max the pressure sensor die output characteristic is as defined in this specification. 5) Over pressure pOV Pressure cycles in the pressure range 0 to pov do not affect the performance of the pressure sensor dies. 6) Burst pressure pberst Up to the burst pressure pberst the diaphragm of the sensor die will not be destroyed mechanically. This parameter is tested at room temperature on samples by increasing the applied pressure until the diaphragm is destroyed. 7) Operating power supply VDD The pressure sensor parameters are defined for a power supply voltage of VDD = 5 V. In the operating power supply voltage range VDD,min to VDD,max the ratiometric parameters r(VDD) like sensitivity, offset voltage and the temperature coefficient of the offset voltage are defined by: ( ) ] V [ 5 V ]) V [ 5 ( r V r DD DD = 8) Total bridge resistance RS The total bridge resistance is defined between pad X5 and X2 (see the dimensional drawing in this data sheet) of the closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement). 9) Temperature coefficients of resistance α α α αRs and β β β βRs: The temperature coefficients of resistance are tested for design verification on samples over a reduced temperature range Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C. The temperature coefficients of first and second order are defined with the polynomial: ( ) ( ) ° − β + ° − α + ° = = 2 Rs Rs S S C 25 T C 25 T 1 ) C 25 T ( R ) T ( R The coefficients αRs and βRs are calculated using the three measurement points of Rs(T) at Tmeas,min, TR and Tmeas,max. 10) Offset voltage V 0 The offset voltage V0 is the output voltage Vout(p = 0 bar abs) at zero absolute pressure and for a bridge voltage power supply VDD = 5 V. For design verification V0 is measured on samples by extrapolating the output characteristic to zero bar. It should be noted that this parameter may be influenced by the assembly. 11) Temperature coefficient of offset voltage TCV 0 The temperature coefficients of offset voltage are defined for a bridge voltage power supply VDD = 5 V. These parameters strongly depend on assembly conditions like gluing, wire bonding etc. The temperature coefficients of offset voltage are tested for design verification on samples over a reduce temperature range, using the temperature Tmeas,min = –20 °C, Tmeas,max = 80 °C and TR = 25 °C. Assuming the offset voltage is mainly due to induce stress TCV0 may be calculated by extrapolating using: ( ) ( )2 2 1 o 2 s s 0 ) C 25 T ( v ) C 25 T ( v ) C 25 ( V ) C 25 T ( ) C 25 T ( 1 ) T ( V ° − + ° − + ° ° − β + ° − α + = |
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