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Product Data Sheet

5

PARAMETER

VALUE

STANDARD

DEVIATION

UNIT

Source res is tan ce

5.62

0.6

Ω

Drain res is tan ce

4.48

0.4

Ω

Gate res is tan ce

4.68

0.5

Ω

Tran s conductance

52.32

6

m S

Drain–to –s ource res is tan ce

224

40

Ω

Input res is tan ce

1.30

1

Ω

Gate–to–s ource cap acitance

0 .351

0.027

pF

Gate–to–drain cap acitance

0 .0159

0.0037

pF

Drain–to –s ource capacitance

0 .0877

0.0095

pF

τ

Tim e cons tant

2.33

0.1

p s

TYPICAL MODEL

PARAMETERS

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during

handing, assembly and test.

TGF1350-SCC