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TGF4230 Datasheet(PDF) 1 Page - TriQuint Semiconductor |
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TGF4230 Datasheet(HTML) 1 Page - TriQuint Semiconductor |
1 / 7 page TGF4230-EEU Discr 4230 1.2mm ete HFET q 1200 µm X 0.5 µm HFET q Nominal Pout of 28.5- dBm at 8.5-GHz q Nominal Gain of 10.0-dB at 8.5-GHz q Nominal PAE of 55% at 8.5-GHz q Suitable for High-Reliability Applications q 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.) The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using automatic equipment. PHOTO ENLARGEMENT DESCRIPTION T R I Q U I N T S E M I C O N D U C T O R , I N C . TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com |
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