TGF4230-EEU

3

GAIN VS.

INPUT POWER

7

8

9

10

11

12

4

6

8

10

12

14

16

18

20

22

Input Power (dBm)

F

=8.5GHz

V

I

T

DRAIN CURRENT

VS. INPUT POWER

40

60

80

100

120

140

160

180

4

6

8

1012

141618

2022

Input Power (dBm)

F

=8.5GHz

V

I

T

ABSOLUTE

MAXIMUM RATINGS

Drain - to- source V oltage, V

DS

. ................................................................................................................ 12 V

Gate - to- source V oltage, V

GS

......................................................................................................

- 5 V to 0 V

Mounting temperatur e (30 sec), T

M

..................................................................................................

320 C

Storage temperature range, T

STG

............................................................ ................................ - 65 to 200 C

Power dissipation, P

(see thermal data on next page)

Operating channel temperatur e, T

(see thermal data on next page)

Ratings over base-plate temperature range T

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those indicated “RF and DC Characteristics” is not implied. Exposure to absolute maximum rated conditions for

extended periods of time may affect device reliability.

TriQuint Semiconductor, Inc.

•

Texas Facilities

• (972) 995-8465

• www.triquint.com