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B58601G5010A002 Datasheet(PDF) 3 Page - EPCOS |
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B58601G5010A002 Datasheet(HTML) 3 Page - EPCOS |
3 / 8 page Pressure sensors C41 series Gauge pressure sensor die AS SEN PD 2009-08-03 Please read Cautions and warnings and Page 3 of 8 Important notes at the end of this document. Technical data Absolute maximum ratings Parameter Symbol Conditions Min. Typ. Max. Unit Supply voltage Maximum supply voltage VDD Without damage 1) 10 V Temperature ranges 2) –40 135 °C Operating temperature range Ta For t <15 min –40 140 °C Storage temperature range Tst 3) –40 150 °C Pressure ranges Operating pressure ranges pr Gauge pressure 4) 0 ... 25 0 ... 60 mbar Over pressure pov Gauge pressure 5) 5 pr Burst pressure pberst Gauge pressure 6) 10 pr Electrical specifications Parameter Symbol Conditions Min. Typ. Max. Unit Supply voltage / bridge resistance Operating supply voltage VDD 7) 1.0 5.0 V Total bridge resistance RS @ 25 °C 8) 4.0 5.0 6.0 kΩ αRs 2.1 2.4 2.7 10 –3/K Temperature coefficient of total bridge resistance βRs @ 25 °C 9) 4 6 8 10 –6/K2 Output signal @ VDD = 5 V Offset V0 @ 25 °C 10) –25 0 25 mV Sensitivity S @ 25 °C 13) See next table mV/bar αS –2.5 –2.2 –1.9 10 –3/K Temperature coefficient of the sensitivity βS @ 25 °C 15) 3 5 8 10 –6/K2 Pressure hysteresis pHys 16) –0.1 0.1 % FS Optional temperature sensing diode Forward diode voltage VF @ 25 °C, IF = 50 µA 17) 550 600 650 mV Temperature coefficient of forward diode voltage TCVF @ 25 °C, IF = 50 µA 18) –2.4 –2.2 –2.0 mV/K Long-term stability (Full scale normal output FSON = 40 mV) Temperature hysteresis of offset THV0 19) –1 ±0.6 1 % FSON Temperature cycle drift of offset TCDV0 19) –0.75 ±0.3 0.75 % FSON High temperature drift of offset HTDV0 19) –0.75 ±0.3 0.75 % FSON Long term stability of offset LTSV0 19) –1.4 ±0.9 1.4 % FSON |
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