1PS66SB82 datasheet(3/10 Pages) PHILIPS | 15 V, 30 mA low Cd Schottky barrier diodes

3 page

1PS66SB82_1PS88SB82_4

Product data sheet

Rev. 04 — 13 January 2010

3 of 10

NXP Semiconductors

1PS66SB82; 1PS88SB82

15 V, 30 mA low Cd Schottky barrier diodes

Thermal characteristics

[1]

For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating will be available on request.

[2]

Refer to SOT666 standard mounting conditions.

[3]

Reflow soldering is the only recommended soldering method.

[4]

Refer to SOT363 (SC-88) standard mounting conditions.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

SOT666

[2][3] --700

K/W

SOT363

[3][4] --416

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

see Figure 1

[1]

IF = 1 mA

340

IF = 30 mA

700

reverse current

VR = 1 V; see Figure 2

0.2

μA

rdif

differential

resistance

IF = 5 mA; f = 1 kHz;

see Figure 3

-12

diode

capacitance

VR = 0 V; f = 1 MHz;

see Figure 4

-1

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