PSMN8R7-80PS_1

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Objective data sheet

Rev. 01 — 29 January 2010

7 of 14

NXP Semiconductors

PSMN8R7-80PS

N-channel 80 V 8.7 m

Ω standard level MOSFET in TO-220

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 10. Gate-source threshold voltage as a function of

junction temperature

Fig 11. Sub-threshold drain current as a function of

gate-source voltage

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aad457

5

10

15

20

25

4

8

12

16

20

(m

Ω)

−60

180

120

060

003aad280

2

3

1

4

5

(V)

0

max

typ

min

03aa35

06

4

2

(A)

min

typ

max

003aae090

0

0.6

1.2

1.8

2.4

3

-60

0

60

120

180

°C)

a