TPS92210

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SLUS989 – JANUARY 2010

ELECTRICAL CHARACTERISTICS (continued)

and GND, a 0.1-

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

TRANSFORMER ZERO ENERGY DETECTION

TZE high to low generates switching period

TZE Zero Crossing Threshold

5

20

50

mV

TZE Low Clamp Voltage

-200

-160

-100

mV

TZE Voltage Threshold to Enable the

Driver switching periods generated at start

0.1

0.15

0.2

V

Internal Start Timer

timer rate

Delay from zero crossing to Driver turn-on

150-

Ω pull-up to 12-V on DRN

150

ns

Wait time for zero energy detection

2

2.4

2.8

μs

with previous zero current detected

Starter time-out period

TZE = 0 V

150

240

300

μs

DRIVER

Driver on-resistance

90

190

m

Ω

Driver off-leakage current

1.5

20

μA

HSDRV on-resistance

HS Driver Current = 50 mA

6

11

Ω

DRN Bulk Discharge

VDD open, DRN = 12 V, Fault latch set

2

2.8

3.6

mA

OVERVOLTAGE FAULT

Over voltage fault threshold at TZE

Fault latch set

4.85

5

5.15

V

TZE blanking and OVP sample time from the

0.6

1

1.7

μs

turn-off edge of DRN

TZE Input bias current

TZE = 5 V

–0.1

–0.1

μA

OVERLOAD FAULT

Current to trigger overload delay timer

0

1.5

3

μA

Delay to overload fault

200

250

300

ms

Retry delay in retry mode or after shutdown

750

ms

command

100

120

150

k

Ω

modes

SHUTDOWN THRESHOLD

Shutdown/retry threshold

OTM high to low

0.7

1

1.3

V

OTM current when OTM is pulled low

–600

–450

–300

μA

MAXIMUM ON TIME

Latch-off

3.43

3.83

4.23

μs

Shutdown/retry

3.4

3.8

4.2

μs

OTM voltage

2.7

3

3.3

V

THERMAL SHUTDOWN

(4)

Shutdown temperature

(4)

165

°C

(4)

Hysteresis

(4)

15

°C

(3)

than 100 k

(4)

Thermal shutdown occurs at temperatures higher than the normal operating range. Device performance at or near thermal shutdown

temperature is not specified or assured.

Copyright © 2010, Texas Instruments Incorporated

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